AO7403 Datasheet. Specs and Replacement
Type Designator: AO7403 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 17 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: SC70-3
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AO7403 substitution
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AO7403 datasheet
ao7403.pdf
AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide VDS (V) = -20V excellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V) voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON) ... See More ⇒
ao7401.pdf
AO7401 30V P-Channel MOSFET General Description Product Summary VDS The AO7401 uses advanced trench technology to -30V provide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V) ... See More ⇒
ao7400.pdf
AO7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V) ... See More ⇒
ao7408.pdf
AO7408 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V) ... See More ⇒
Detailed specifications: AO6801A, AO6801E, AO6802, AO6804A, AO6808, AO6810, AO7400, AO7401, IRF1407, AO7404, AO7405, AO7407, AO7408, AO7410, AO7411, AO7412, AO7413
Keywords - AO7403 MOSFET specs
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