AO7408 MOSFET Datasheet: N-Ch, 20V, 2A. Full specification with pinout and replacement list

AO7408 Specs and Replacement

Type Designator: AO7408

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: SC70-6

AO7408 substitution

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AO7408 datasheet

..1. Size:349K aosemi
ao7408.pdf pdf_icon

AO7408 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V) ... See More ⇒

9.1. Size:202K aosemi
ao7401.pdf pdf_icon

AO7401 30V P-Channel MOSFET General Description Product Summary VDS The AO7401 uses advanced trench technology to -30V provide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V) ... See More ⇒

9.2. Size:110K aosemi
ao7403.pdf pdf_icon

AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide VDS (V) = -20V excellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V) voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON) ... See More ⇒

9.3. Size:191K aosemi
ao7400.pdf pdf_icon

AO7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V) ... See More ⇒