Справочник MOSFET. AO7408

 

AO7408 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AO7408
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.35 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 2 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 2.9 nC
   Время нарастания (tr): 3.2 ns
   Выходная емкость (Cd): 48 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.062 Ohm
   Тип корпуса: SC70-6

 Аналог (замена) для AO7408

 

 

AO7408 Datasheet (PDF)

 ..1. Size:349K  aosemi
ao7408.pdf

AO7408 AO7408

AO740820V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7408 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V)

 9.1. Size:202K  aosemi
ao7401.pdf

AO7408 AO7408

AO740130V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7401 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

 9.2. Size:110K  aosemi
ao7403.pdf

AO7408 AO7408

AO7403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7403 uses advanced trench technology to provide VDS (V) = -20Vexcellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V)voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON)

 9.3. Size:191K  aosemi
ao7400.pdf

AO7408 AO7408

AO740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7400 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V)

 9.4. Size:207K  aosemi
ao7405.pdf

AO7408 AO7408

AO740530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7405 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

 9.5. Size:240K  aosemi
ao7404.pdf

AO7408 AO7408

AO7404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7404 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)

 9.6. Size:345K  aosemi
ao7407.pdf

AO7408 AO7408

AO740720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7407 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

 9.7. Size:1277K  kexin
ao7400.pdf

AO7408 AO7408

SMD Type MOSFETN-Channel MOSFETAO7400 (KO7400) Features VDS (V) = 30V ID = 1.7 A (VGS = 10V) RDS(ON) 55m (VGS = 10V)D RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1 Gate2 SourceG3 DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 12

 9.8. Size:1711K  cn vbsemi
ao7401.pdf

AO7408 AO7408

AO7401www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Converter

 9.9. Size:873K  cn vbsemi
ao7400.pdf

AO7408 AO7408

AO7400www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP

 9.10. Size:837K  cn vbsemi
ao7407.pdf

AO7408 AO7408

AO7407www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Converter

 9.11. Size:2520K  cn tech public
ao7407.pdf

AO7408 AO7408

A O7 4 07P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeAO7407 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C unless ot

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top