All MOSFET. AO7413 Datasheet

 

AO7413 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO7413
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.113 Ohm
   Package: SC70-3

 AO7413 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO7413 Datasheet (PDF)

 ..1. Size:213K  aosemi
 ao7413.pdf

AO7413 AO7413

AO741320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7413 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 9.1. Size:209K  aosemi
 ao7417.pdf

AO7413 AO7413

AO741720V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7417 uses advanced trench technology to provide -20Vexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2Avoltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

 9.2. Size:199K  aosemi
 ao7414.pdf

AO7413 AO7413

AO741420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7414 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 2Avoltages as low as 1.8V, in the small SOT-323 footprint. It RDS(ON) (at VGS=4.5V)

 9.3. Size:213K  aosemi
 ao7415.pdf

AO7413 AO7413

AO741520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 9.4. Size:353K  aosemi
 ao7411.pdf

AO7413 AO7413

AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

 9.5. Size:230K  aosemi
 ao7410.pdf

AO7413 AO7413

AO741030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7410 uses advanced trench technology toprovide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)

 9.6. Size:238K  aosemi
 ao7412.pdf

AO7413 AO7413

AO741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7412 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 1.7Avoltages as low as 2.5V, in the small SOT323 footprint. It RDS(ON) (at VGS=10V)

 9.7. Size:871K  cn vbsemi
 ao7414.pdf

AO7413 AO7413

AO7414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NP32N055I | SIHLI640G | 2SK2021-01 | FTK7N60P

 

 
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