Справочник MOSFET. AO7413

 

AO7413 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AO7413
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.5 nC
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 63 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.113 Ohm
   Тип корпуса: SC70-3

 Аналог (замена) для AO7413

 

 

AO7413 Datasheet (PDF)

 ..1. Size:213K  aosemi
 ao7413.pdf

AO7413 AO7413

AO741320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7413 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 9.1. Size:209K  aosemi
 ao7417.pdf

AO7413 AO7413

AO741720V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7417 uses advanced trench technology to provide -20Vexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2Avoltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

 9.2. Size:199K  aosemi
 ao7414.pdf

AO7413 AO7413

AO741420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7414 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 2Avoltages as low as 1.8V, in the small SOT-323 footprint. It RDS(ON) (at VGS=4.5V)

 9.3. Size:213K  aosemi
 ao7415.pdf

AO7413 AO7413

AO741520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 9.4. Size:353K  aosemi
 ao7411.pdf

AO7413 AO7413

AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

 9.5. Size:230K  aosemi
 ao7410.pdf

AO7413 AO7413

AO741030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7410 uses advanced trench technology toprovide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)

 9.6. Size:238K  aosemi
 ao7412.pdf

AO7413 AO7413

AO741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7412 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 1.7Avoltages as low as 2.5V, in the small SOT323 footprint. It RDS(ON) (at VGS=10V)

 9.7. Size:871K  cn vbsemi
 ao7414.pdf

AO7413 AO7413

AO7414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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