AO741320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7413 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

AO741720V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7417 uses advanced trench technology to provide -20Vexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2Avoltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

AO741420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7414 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 2Avoltages as low as 1.8V, in the small SOT-323 footprint. It RDS(ON) (at VGS=4.5V)

AO741520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

AO741030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7410 uses advanced trench technology toprovide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)

AO741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7412 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 1.7Avoltages as low as 2.5V, in the small SOT323 footprint. It RDS(ON) (at VGS=10V)

AO7414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP