AO7800 PDF and Equivalents Search

 

AO7800 Specs and Replacement

Type Designator: AO7800

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SC70-6

AO7800 substitution

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AO7800 datasheet

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AO7800

AO7800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7800 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.9 A (VGS = 4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON) ... See More ⇒

 9.1. Size:126K  aosemi
 ao7801.pdf pdf_icon

AO7800

AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge, and ID = -0.6A (VGS = -4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON) ... See More ⇒

Detailed specifications: AO7410, AO7411, AO7412, AO7413, AO7414, AO7415, AO7417, AO7600, 8N60, AO7801, AO8801, AO8801A, AO8804, AO8807, AO8808A, AO8810, AO8814

Keywords - AO7800 MOSFET specs

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