All MOSFET. AO7800 Datasheet

 

AO7800 Datasheet and Replacement


   Type Designator: AO7800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SC70-6
 

 AO7800 substitution

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AO7800 Datasheet (PDF)

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AO7800

AO7800Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7800 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.9 A (VGS = 4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)

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AO7800

AO7801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7801 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge, and ID = -0.6A (VGS = -4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)

Datasheet: AO7410 , AO7411 , AO7412 , AO7413 , AO7414 , AO7415 , AO7417 , AO7600 , K2611 , AO7801 , AO8801 , AO8801A , AO8804 , AO8807 , AO8808A , AO8810 , AO8814 .

History: AOB2146L | SUP85N03-04P | HGB025N06S | AP2304AGN | AP70SL380AS | H04N65E | AP9571GP-HF

Keywords - AO7800 MOSFET datasheet

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