All MOSFET. AO8822 Datasheet

 

AO8822 Datasheet and Replacement


   Type Designator: AO8822
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TSSOP-8
 

 AO8822 substitution

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AO8822 Datasheet (PDF)

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AO8822

AO882220V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8822 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

 9.1. Size:200K  aosemi
 ao8820.pdf pdf_icon

AO8822

AO882020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8820 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

Datasheet: AO8801A , AO8804 , AO8807 , AO8808A , AO8810 , AO8814 , AO8818 , AO8820 , 60N06 , AO8830 , AO9926B , AO9926C , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 , AOB11N60 .

History: CEB6086 | AP60WN2K3H

Keywords - AO8822 MOSFET datasheet

 AO8822 cross reference
 AO8822 equivalent finder
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