AO8822 Specs and Replacement
Type Designator: AO8822
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TSSOP-8
AO8822 substitution
- MOSFET ⓘ Cross-Reference Search
AO8822 datasheet
ao8822.pdf
AO8822 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V) ... See More ⇒
ao8820.pdf
AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AO8801A, AO8804, AO8807, AO8808A, AO8810, AO8814, AO8818, AO8820, IRLB3034, AO8830, AO9926B, AO9926C, AOB10N60, AOB10T60P, AOB1100L, AOB11C60, AOB11N60
Keywords - AO8822 MOSFET specs
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