AO9926B PDF and Equivalents Search

 

AO9926B Specs and Replacement

Type Designator: AO9926B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SO-8

AO9926B substitution

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AO9926B datasheet

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ao9926b.pdf pdf_icon

AO9926B

AO9926B 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:1145K  aosemi
ao9926c.pdf pdf_icon

AO9926B

AO9926C 20V Dual N-Channel MOSFET General Description Product Summary VDS The AO9926C uses advanced trench technology to 20V 7.6A provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) with gate voltages as low as 1.8V while retaining a 12V ... See More ⇒

Detailed specifications: AO8807, AO8808A, AO8810, AO8814, AO8818, AO8820, AO8822, AO8830, IRFB7545, AO9926C, AOB10N60, AOB10T60P, AOB1100L, AOB11C60, AOB11N60, AOB11S60, AOB11S65

Keywords - AO9926B MOSFET specs

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