AOB20S60 Datasheet and Replacement

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

isc N-Channel MOSFET Transistor AOB20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TMWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max