Справочник MOSFET. AOB20S60

 

AOB20S60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB20S60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 266 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19.8 nC
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 68 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для AOB20S60

 

 

AOB20S60 Datasheet (PDF)

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 aot20s60 aob20s60 aotf20s60.pdf

AOB20S60 AOB20S60

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 ..2. Size:324K  aosemi
 aob20s60.pdf

AOB20S60 AOB20S60

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 ..3. Size:255K  inchange semiconductor
 aob20s60.pdf

AOB20S60 AOB20S60

isc N-Channel MOSFET Transistor AOB20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.1. Size:325K  aosemi
 aob20s60l.pdf

AOB20S60 AOB20S60

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 9.1. Size:1170K  aosemi
 aob20b65m1.pdf

AOB20S60 AOB20S60

AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TMWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

 9.2. Size:263K  aosemi
 aob20c60.pdf

AOB20S60 AOB20S60

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

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