AOB25S65
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOB25S65
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 357
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26.4
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 87
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
TO-263
AOB25S65
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOB25S65
Datasheet (PDF)
..1. Size:311K aosemi
aob25s65.pdf 
AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi
..2. Size:253K inchange semiconductor
aob25s65.pdf
isc N-Channel MOSFET Transistor AOB25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
0.1. Size:312K aosemi
aob25s65l.pdf
AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi
9.1. Size:636K aosemi
aot2502l aob2502l.pdf
AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:297K aosemi
aob2500l.pdf
AOT2500L/AOB2500L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.3. Size:306K aosemi
aob254l.pdf
AOT254L/AOB254L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOT254L/AOB254L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 32Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
9.4. Size:334K aosemi
aob2502l.pdf
AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:287K aosemi
aob256l.pdf
AOB256L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOB256L uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.6. Size:845K cn vbsemi
aob254l.pdf
AOB254Lwww.VBsemi.twN-Channel 150V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.035 at VGS = 10 V45150 New Low Thermal Resistance Package0.042 at VGS = 7.5 V42 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-263GG D STop
9.7. Size:252K inchange semiconductor
aob2500l.pdf
isc N-Channel MOSFET Transistor AOB2500LFEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
9.8. Size:253K inchange semiconductor
aob254l.pdf
isc N-Channel MOSFET Transistor AOB254LFEATURESDrain Current I = 32A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.9. Size:252K inchange semiconductor
aob2502l.pdf
isc N-Channel MOSFET Transistor AOB2502LFEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
9.10. Size:253K inchange semiconductor
aob256l.pdf
isc N-Channel MOSFET Transistor AOB256LFEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: FMP36-015P
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, FDMC7200
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, FDMC0310AS
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