All MOSFET. AOB2608L Datasheet

 

AOB2608L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB2608L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.6 V

Maximum Drain Current |Id|: 72 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38.5 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 270 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0076 Ohm

Package: TO-263

AOB2608L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB2608L Datasheet (PDF)

0.1. aob2608l.pdf Size:289K _aosemi

AOB2608L
AOB2608L

AOT2608L/AOB2608L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72Atechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

0.2. aob2608l.pdf Size:238K _inchange_semiconductor

AOB2608L
AOB2608L

isc N-Channel MOSFET Transistor AOB2608LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.1. aob2606l.pdf Size:349K _aosemi

AOB2608L
AOB2608L

AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

8.2. aob260l.pdf Size:276K _aosemi

AOB2608L
AOB2608L

AOT260L/AOB260L60V N-Channel MOSFETGeneral Description Product SummaryThe AOT(B)260L uses Trench MOSFET technology that VDS60Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 140Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 8.3. aob2606l.pdf Size:264K _inchange_semiconductor

AOB2608L
AOB2608L

sc N-Channel MOSFET Transistor AOB2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATING

8.4. aob260l.pdf Size:257K _inchange_semiconductor

AOB2608L
AOB2608L

Isc N-Channel MOSFET Transistor AOB260lFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

Datasheet: AOB20S60 , AOB210L , AOB240L , AOB2500L , AOB254L , AOB256L , AOB25S65 , AOB2606L , IRF3710 , AOB260L , AOB2618L , AOB262L , AOB264L , AOB266L , AOB270AL , AOB27S60 , AOB280L .

 

 
Back to Top