Справочник MOSFET. AOB2608L

 

AOB2608L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOB2608L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 100 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 3.6 V

Максимально допустимый постоянный ток стока |Id|: 72 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 38.5 nC

Время нарастания (tr): 10 ns

Выходная емкость (Cd): 270 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0076 Ohm

Тип корпуса: TO-263

Аналог (замена) для AOB2608L

 

 

AOB2608L Datasheet (PDF)

0.1. aob2608l.pdf Size:289K _aosemi

AOB2608L
AOB2608L

AOT2608L/AOB2608L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72Atechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

0.2. aob2608l.pdf Size:238K _inchange_semiconductor

AOB2608L
AOB2608L

isc N-Channel MOSFET Transistor AOB2608LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.1. aob2606l.pdf Size:349K _aosemi

AOB2608L
AOB2608L

AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

8.2. aob260l.pdf Size:276K _aosemi

AOB2608L
AOB2608L

AOT260L/AOB260L60V N-Channel MOSFETGeneral Description Product SummaryThe AOT(B)260L uses Trench MOSFET technology that VDS60Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 140Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 8.3. aob2606l.pdf Size:264K _inchange_semiconductor

AOB2608L
AOB2608L

sc N-Channel MOSFET Transistor AOB2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATING

8.4. aob260l.pdf Size:257K _inchange_semiconductor

AOB2608L
AOB2608L

Isc N-Channel MOSFET Transistor AOB260lFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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