All MOSFET. AOB286L Datasheet

 

AOB286L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB286L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.3 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 435 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0057 Ohm

Package: TO-263

AOB286L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB286L Datasheet (PDF)

0.1. aob286l.pdf Size:285K _aosemi

AOB286L
AOB286L

AOT286L/AOB286L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

0.2. aob286l.pdf Size:239K _inchange_semiconductor

AOB286L
AOB286L

isc N-Channel MOSFET Transistor AOB286LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 9.1. aot280l aob280l.pdf Size:269K _aosemi

AOB286L
AOB286L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

9.2. aob284l aot284l.pdf Size:272K _aosemi

AOB286L
AOB286L

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.3. aob288l.pdf Size:363K _aosemi

AOB286L
AOB286L

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

9.4. aob280l.pdf Size:269K _aosemi

AOB286L
AOB286L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.5. aob282l.pdf Size:276K _aosemi

AOB286L
AOB286L

AOT282L/AOB282L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT282L & AOB282L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

9.6. aob288l.pdf Size:238K _inchange_semiconductor

AOB286L
AOB286L

isc N-Channel MOSFET Transistor AOB288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

9.7. aob280l.pdf Size:238K _inchange_semiconductor

AOB286L
AOB286L

isc N-Channel MOSFET Transistor AOB280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.8. aob284l.pdf Size:238K _inchange_semiconductor

AOB286L
AOB286L

isc N-Channel MOSFET Transistor AOB284LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.9. aob282l.pdf Size:238K _inchange_semiconductor

AOB286L
AOB286L

isc N-Channel MOSFET Transistor AOB282LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: AOB262L , AOB264L , AOB266L , AOB270AL , AOB27S60 , AOB280L , AOB282L , AOB284L , IRF730 , AOB288L , AOB290L , AOB2910L , AOB2918L , AOB292L , AOB296L , AOB298L , AOB29S50 .

 

 
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