Справочник MOSFET. AOB286L

 

AOB286L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB286L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 435 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для AOB286L

 

 

AOB286L Datasheet (PDF)

 ..1. Size:285K  aosemi
 aob286l.pdf

AOB286L AOB286L

AOT286L/AOB286L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 ..2. Size:239K  inchange semiconductor
 aob286l.pdf

AOB286L AOB286L

isc N-Channel MOSFET Transistor AOB286LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 9.1. Size:269K  aosemi
 aot280l aob280l.pdf

AOB286L AOB286L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.2. Size:269K  aosemi
 aob280l.pdf

AOB286L AOB286L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.3. Size:363K  aosemi
 aob288l.pdf

AOB286L AOB286L

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 9.4. Size:272K  aosemi
 aob284l aot284l.pdf

AOB286L AOB286L

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.5. Size:276K  aosemi
 aob282l.pdf

AOB286L AOB286L

AOT282L/AOB282L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT282L & AOB282L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.6. Size:238K  inchange semiconductor
 aob280l.pdf

AOB286L AOB286L

isc N-Channel MOSFET Transistor AOB280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.7. Size:238K  inchange semiconductor
 aob288l.pdf

AOB286L AOB286L

isc N-Channel MOSFET Transistor AOB288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 9.8. Size:238K  inchange semiconductor
 aob282l.pdf

AOB286L AOB286L

isc N-Channel MOSFET Transistor AOB282LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.9. Size:238K  inchange semiconductor
 aob284l.pdf

AOB286L AOB286L

isc N-Channel MOSFET Transistor AOB284LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top