AOB290L MOSFET Datasheet: N-Ch, 100V, 140A. Full specification with pinout and replacement list

AOB290L Specs and Replacement

Type Designator: AOB290L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 2780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO-263

AOB290L substitution

- MOSFET ⓘ Cross-Reference Search

AOB290L datasheet

..1. Size:341K aosemi
aob290l.pdf pdf_icon

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:341K aosemi
aot290l aob290l.pdf pdf_icon

..3. Size:204K inchange semiconductor
aob290l.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB290L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM ... See More ⇒

8.1. Size:362K aosemi
aob2904.pdf pdf_icon

AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒