AOB290L - Даташиты. Аналоги. Основные параметры

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOB290LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

AOT2906/AOB2906TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOB2904FEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

isc N-Channel MOSFET Transistor AOB2906FEATURESDrain Current I = 122A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen