All MOSFET. AOB292L Datasheet

 

AOB292L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB292L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.4 V

Maximum Drain Current |Id|: 105 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 11.5 nS

Drain-Source Capacitance (Cd): 557 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0041 Ohm

Package: TO-263

AOB292L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB292L Datasheet (PDF)

0.1. aob292l.pdf Size:278K _aosemi

AOB292L
AOB292L

AOT292L/AOB292L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT292L/AOB292L uses Trench MOSFET 100V ID (at VGS=10V) 105Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

0.2. aob292l.pdf Size:237K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB292LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 9.1. aot29s50l aob29s50l aotf29s50l aotf29s50.pdf Size:441K _1

AOB292L
AOB292L

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50L & AOB29S50L & AOTF29S50L &AOTF29S50 have been fabricated using the advanced IDM 120AMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15levels of performance and robustness in switching Qg,typ 26.6nCappl

9.2. aob296l.pdf Size:281K _aosemi

AOB292L
AOB292L

AOT296L/AOB296L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.3. aob2904.pdf Size:362K _aosemi

AOB292L
AOB292L

AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.4. aob2906.pdf Size:372K _aosemi

AOB292L
AOB292L

AOT2906/AOB2906TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

 9.5. aob2910l aot2910l aotf2910l.pdf Size:381K _aosemi

AOB292L
AOB292L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

9.6. aob29s50.pdf Size:324K _aosemi

AOB292L
AOB292L

AOT29S50/AOB29S50/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50 & AOB29S50 & AOTF29S50 have beenfabricated using the advanced MOSTM high voltage IDM 120Aprocess that is designed to deliver high levels of RDS(ON),max 0.15performance and robustness in switching applications. Qg,typ 26.6nCBy provi

9.7. aob2918l.pdf Size:381K _aosemi

AOB292L
AOB292L

AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

9.8. aob290l.pdf Size:341K _aosemi

AOB292L
AOB292L

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

9.9. aot290l aob290l.pdf Size:341K _aosemi

AOB292L
AOB292L

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

9.10. aob298l.pdf Size:434K _aosemi

AOB292L
AOB292L

AOT298L/AOB298L/AOTF298L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT298L & AOB298L & AOTF298L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

9.11. aob296l.pdf Size:238K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB296LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.12. aob2904.pdf Size:238K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB2904FEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

9.13. aob2906.pdf Size:238K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB2906FEATURESDrain Current I = 122A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

9.14. aob29s50.pdf Size:255K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.15. aob2918l.pdf Size:238K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB2918LFEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

9.16. aob290l.pdf Size:204K _inchange_semiconductor

AOB292L
AOB292L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOB290LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

9.17. aob2910l.pdf Size:238K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

9.18. aob298l.pdf Size:232K _inchange_semiconductor

AOB292L
AOB292L

isc N-Channel MOSFET Transistor AOB298LDESCRIPTIONDrain Current I = 58A@ T =25D CDrain Source Voltage: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Be ideal for boost converters and synchronous rectifiersfor consumer, telecom, industrial power supplies and LEDbacklig

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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