AOB4184
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOB4184
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 17.2
nS
Cossⓘ -
Output Capacitance: 215
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
TO-263
AOB4184
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOB4184
Datasheet (PDF)
..1. Size:177K aosemi
aob4184.pdf 
AOB418440V N-Channel MOSFETGeneral Description FeaturesThe AOB4184 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate VDS (V) =40Vcharge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V)D2PAK package, this device is well suited for high RDS(ON)
..2. Size:238K inchange semiconductor
aob4184.pdf
isc N-Channel MOSFET Transistor AOB4184FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
8.1. Size:296K aosemi
aob418l.pdf
AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
8.2. Size:296K aosemi
aob418.pdf
AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
8.3. Size:239K inchange semiconductor
aob418l.pdf
isc N-Channel MOSFET Transistor AOB418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
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