AOB418440V N-Channel MOSFETGeneral Description FeaturesThe AOB4184 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate VDS (V) =40Vcharge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V)D2PAK package, this device is well suited for high RDS(ON)

isc N-Channel MOSFET Transistor AOB4184FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

isc N-Channel MOSFET Transistor AOB418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen