FSYA250R Specs and Replacement
Type Designator: FSYA250R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SMD1
FSYA250R substitution
- MOSFET ⓘ Cross-Reference Search
FSYA250R datasheet
fsya250.pdf
FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 27A, 200V, rDS(ON) = 0.100 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒
Detailed specifications: FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , RFP50N06 , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS , H5N2503P .
Keywords - FSYA250R MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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