AOB482L Datasheet and Replacement
Type Designator: AOB482L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 105 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 458 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: TO-263
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AOB482L Datasheet (PDF)
aob482l.pdf

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob482l.pdf

isc N-Channel MOSFET Transistor AOB482LFEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aob482.pdf

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob480l.pdf

AOT480L/AOB480L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT480L & AOB480L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180Agate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BFL4037 | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL
Keywords - AOB482L MOSFET datasheet
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History: BFL4037 | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL



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