AOB482L - Даташиты. Аналоги. Основные параметры

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

isc N-Channel MOSFET Transistor AOB482LFEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

AOT480L/AOB480L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT480L & AOB480L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180Agate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOB480LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose