AOC2413
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOC2413
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.55
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.65
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 2.8
nS
Cossⓘ -
Output Capacitance: 475
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package: ALPHADFN1.57X1.57
AOC2413
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOC2413
Datasheet (PDF)
..1. Size:256K aosemi
aoc2413.pdf 
AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
8.1. Size:260K aosemi
aoc2414.pdf
AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
8.2. Size:253K aosemi
aoc2417.pdf
AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
8.3. Size:252K aosemi
aoc2415.pdf
AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)
8.4. Size:223K aosemi
aoc2412.pdf
AOC241220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOC2412 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5Awith gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)
8.5. Size:202K aosemi
aoc2411.pdf
AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
Datasheet: WPB4002
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