AOC2417 Datasheet and Replacement
Type Designator: AOC2417
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: ALPHADFN1.57X1.57
AOC2417 substitution
AOC2417 Datasheet (PDF)
aoc2417.pdf

AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2414.pdf

AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
aoc2413.pdf

AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
aoc2415.pdf

AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)
Datasheet: AOB7S65 , AOC2401 , AOC2403 , AOC2411 , AOC2412 , AOC2413 , AOC2414 , AOC2415 , P0903BDG , AOC2421 , AOC2422 , AOC2423 , AOC2800 , AOC2802 , AOC2804 , AOC2806 , AOC4810 .
History: MS60P02NE | STL65DN3LLH5
Keywords - AOC2417 MOSFET datasheet
AOC2417 cross reference
AOC2417 equivalent finder
AOC2417 lookup
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History: MS60P02NE | STL65DN3LLH5



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