AOC2417 - аналоги, параметры транзистора - Справочник транзисторов

AOC2417 даташит

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AOC2417 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

8.1. Size:260K aosemi
aoc2414.pdf pdf_icon

AOC2414 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

8.2. Size:256K aosemi
aoc2413.pdf pdf_icon

AOC2413 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

8.3. Size:252K aosemi
aoc2415.pdf pdf_icon

AOC2415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5A with gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)