All MOSFET. AOD11S60 Datasheet

 

AOD11S60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOD11S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 37.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
   Package: TO-252

 AOD11S60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOD11S60 Datasheet (PDF)

 ..1. Size:394K  aosemi
 aod11s60.pdf

AOD11S60 AOD11S60

AOD11S60/AOI11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOD11S60 & AOI11S60 have been fabricated usingthe advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg and

 ..2. Size:264K  inchange semiconductor
 aod11s60.pdf

AOD11S60 AOD11S60

isc N-Channel MOSFET Transistor AOD11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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