AOD11S60 MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

AOD11S60 Specs and Replacement

Type Designator: AOD11S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 37.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm

Package: TO-252

AOD11S60 substitution

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AOD11S60 datasheet

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AOD11S60/AOI11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD11S60 & AOI11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg and... See More ⇒

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..3. Size:264K inchange semiconductor
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isc N-Channel MOSFET Transistor AOD11S60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

Detailed specifications: AOC2421, AOC2422, AOC2423, AOC2800, AOC2802, AOC2804, AOC2806, AOC4810, IRF520, AOD1N60, AOD200, AOD208, AOD210, AOD2210, AOD240, AOD242, AOD254