AOD2606 Datasheet and Replacement
Type Designator: AOD2606
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-252
AOD2606 substitution
AOD2606 Datasheet (PDF)
aod2606.pdf

AOD260660V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD2606 uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aod2606.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD2606FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
aod2610e aoi2610e aoy2610e.pdf

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aod2610e.pdf

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOD208 , AOD210 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 , AOD256 , IRF9640 , AOD2610 , AOD2810 , AOD2816 , AOD2908 , AOD2910 , AOD2916 , AOD2922 , AOD2N100 .
History: NVMFD5853N | AM10P10-530I | SE3407 | BSB017N03LX3 | AP97T07AGP-HF | UT2316G-AE3-R | IPB80N06S2L-11
Keywords - AOD2606 MOSFET datasheet
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History: NVMFD5853N | AM10P10-530I | SE3407 | BSB017N03LX3 | AP97T07AGP-HF | UT2316G-AE3-R | IPB80N06S2L-11



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