AOD2606
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD2606
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 46
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 345
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068
Ohm
Package:
TO-252
AOD2606
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD2606
Datasheet (PDF)
..1. Size:275K aosemi
aod2606.pdf 
AOD260660V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD2606 uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
..2. Size:208K inchange semiconductor
aod2606.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD2606FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.1. Size:411K aosemi
aod2610e aoi2610e aoy2610e.pdf
AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:411K aosemi
aod2610e.pdf
AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:292K aosemi
aod2610.pdf
AOD261060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD2610 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 46Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.4. Size:828K cn vbsemi
aod2610.pdf
AOD2610www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Un
9.5. Size:265K inchange semiconductor
aod2610e.pdf
isc N-Channel MOSFET Transistor AOD2610EFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.6. Size:262K inchange semiconductor
aod2610.pdf
Isc N-Channel MOSFET Transistor AOD2610FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
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