AOD2606 Specs and Replacement
Type Designator: AOD2606
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-252
AOD2606 substitution
AOD2606 datasheet
aod2606.pdf
AOD2606 60V N-Channel MOSFET General Description Product Summary VDS The AOD2606 uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
aod2606.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2606 FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
aod2610e aoi2610e aoy2610e.pdf
AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aod2610e.pdf
AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOD208 , AOD210 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 , AOD256 , IRF1405 , AOD2610 , AOD2810 , AOD2816 , AOD2908 , AOD2910 , AOD2916 , AOD2922 , AOD2N100 .
Keywords - AOD2606 MOSFET specs
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