All MOSFET. AOD2606 Datasheet

 

AOD2606 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOD2606

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 46 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 345 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm

Package: TO-252

AOD2606 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOD2606 Datasheet (PDF)

1.1. aod2606.pdf Size:208K _inchange_semiconductor

AOD2606
AOD2606

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2606 ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

1.2. aod2606.pdf Size:275K _aosemi

AOD2606
AOD2606

AOD2606 60V N-Channel MOSFET General Description Product Summary VDS The AOD2606 uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 6.8mΩ switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This

 5.1. aod2610.pdf Size:262K _inchange_semiconductor

AOD2606
AOD2606

Isc N-Channel MOSFET Transistor AOD2610 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

5.2. aod2610e.pdf Size:411K _aosemi

AOD2606
AOD2606

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 9.5mΩ • Low Eoss RDS(ON) (at VGS=4.5V) < 13.3mΩ • ESD protected • RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 Applications

 5.3. aod2610.pdf Size:292K _aosemi

AOD2606
AOD2606

AOD2610 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 10.7mΩ minimized due to an extremely low combination of RDS(ON) (at VGS =4.5V) < 13.5mΩ RDS(ON) and Crss.In a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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