AOD4102 Datasheet and Replacement
Type Designator: AOD4102
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: TO-252
AOD4102 substitution
AOD4102 Datasheet (PDF)
aod4102.pdf

AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)
aod4102.pdf

isc N-Channel MOSFET Transistor AOD4102FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod410.pdf

AOD410N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 8A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
aod4100.pdf

AOD4100N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4100 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)
Datasheet: AOD3N40 , AOD3N50 , AOD3N60 , AOD3N80 , AOD3T40P , AOD403 , AOD407 , AOD409 , IRFZ44N , AOD4120 , AOD4124 , AOD4126 , AOD4128 , AOD4130 , AOD4132 , AOD4136 , AOD413A .
History: 2SK1939-01 | SI4833DY
Keywords - AOD4102 MOSFET datasheet
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History: 2SK1939-01 | SI4833DY



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