All MOSFET. AOD4S60 Datasheet

 

AOD4S60 Datasheet and Replacement


   Type Designator: AOD4S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-252
 

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AOD4S60 Datasheet (PDF)

 ..1. Size:451K  aosemi
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AOD4S60

AOD4S60/AOI4S60/AOU4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOD4S60 & AOI4S60 & AOU4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS(o

 ..2. Size:266K  inchange semiconductor
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AOD4S60

isc N-Channel MOSFET Transistor AOD4S60FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: AOD482 , AOD484 , AOD486A , AOD492 , AOD496 , AOD496A , AOD498 , AOD4N60 , AO4407 , AOD4T60 , AOD4T60P , AOD502 , AOD504 , AOD508 , AOD510 , AOD514 , AOD516 .

History: NCE60NF055F | H04N60F | WMN30N80M3 | SFF240J | 2SK1008-01 | BUZ83

Keywords - AOD4S60 MOSFET datasheet

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