AOD4S60/AOI4S60/AOU4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOD4S60 & AOI4S60 & AOU4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS(o

isc N-Channel MOSFET Transistor AOD4S60FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a