AOD504
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD504
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 46
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 512
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO-252
AOD504
Datasheet (PDF)
..1. Size:287K aosemi
aod504.pdf 
AOD50425V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:265K inchange semiconductor
aod504.pdf
isc N-Channel MOSFET Transistor AOD504FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:283K aosemi
aod502.pdf
AOD50225V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:302K aosemi
aod508.pdf
AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:302K aosemi
aod508 aoi508.pdf
AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:265K inchange semiconductor
aod502.pdf
isc N-Channel MOSFET Transistor AOD502FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap
9.5. Size:265K inchange semiconductor
aod508.pdf
isc N-Channel MOSFET Transistor AOD508FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: WPB4002
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