AOD538 MOSFET Datasheet: N-Ch, 30V, 70A. Full specification with pinout and replacement list

AOD538 Specs and Replacement

Type Designator: AOD538

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 915 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO-252

AOD538 substitution

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AOD538 datasheet

..1. Size:655K aosemi
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AOD538/AOI538 30V N-Channel MOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:308K aosemi
aod538.pdf pdf_icon

AOD538/AOI538 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

..3. Size:266K inchange semiconductor
aod538.pdf pdf_icon

isc N-Channel MOSFET Transistor AOD538 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

9.1. Size:348K aosemi
aod536.pdf pdf_icon

AOD536 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒