AOD9T40P PDF and Equivalents Search

 

AOD9T40P Specs and Replacement

Type Designator: AOD9T40P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-252

AOD9T40P substitution

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AOD9T40P datasheet

 ..1. Size:444K  aosemi
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AOD9T40P

AOD9T40P 400V,6.6A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 500V Low RDS(ON) IDM 26A Low Ciss and Crss RDS(ON),max ... See More ⇒

 ..2. Size:265K  inchange semiconductor
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AOD9T40P

isc N-Channel MOSFET Transistor AOD9T40P FEATURES Drain Current I = 6.6A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

Detailed specifications: AOD7N60, AOD7N65, AOD7S60, AOD7S65, AOD8N25, AOD9N40, AOD9N50, AOD9N52, AO3400A, AOH3106, AOH3110, AOI11S60, AOI1N60, AOI208, AOI2210, AOI2N60, AOI2N60A

Keywords - AOD9T40P MOSFET specs

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