All MOSFET. AOD9T40P Datasheet

 

AOD9T40P Datasheet and Replacement


   Type Designator: AOD9T40P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-252
 

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AOD9T40P Datasheet (PDF)

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AOD9T40P

AOD9T40P400V,6.6A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 500V Low RDS(ON) IDM 26A Low Ciss and Crss RDS(ON),max

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AOD9T40P

isc N-Channel MOSFET Transistor AOD9T40PFEATURESDrain Current I = 6.6A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: AOD7N60 , AOD7N65 , AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , RU6888R , AOH3106 , AOH3110 , AOI11S60 , AOI1N60 , AOI208 , AOI2210 , AOI2N60 , AOI2N60A .

History: SPU07N60C3 | F5020-S

Keywords - AOD9T40P MOSFET datasheet

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