All MOSFET. AOH3106 Datasheet

 

AOH3106 Datasheet and Replacement


   Type Designator: AOH3106
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT223
 

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AOH3106 Datasheet (PDF)

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AOH3106

AOH3106100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOH3106 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

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AOH3106

AOH3110100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOH3110 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 1.0Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

Datasheet: AOD7N65 , AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , IRF730 , AOH3110 , AOI11S60 , AOI1N60 , AOI208 , AOI2210 , AOI2N60 , AOI2N60A , AOI403 .

History: P0903BT | AOLF66610 | TPCS8303 | TK12A53D | HFD5N60S | VSE044C03MD | IRFS9243

Keywords - AOH3106 MOSFET datasheet

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