AOH3106 Datasheet and Replacement
Type Designator: AOH3106
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SOT223
AOH3106 substitution
AOH3106 Datasheet (PDF)
aoh3106.pdf
AOH3106100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOH3106 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
aoh3110.pdf
AOH3110100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOH3110 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 1.0Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
Datasheet: AOD7N65 , AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , IRFB31N20D , AOH3110 , AOI11S60 , AOI1N60 , AOI208 , AOI2210 , AOI2N60 , AOI2N60A , AOI403 .
History: BUK553-60B | BUK553-60A
Keywords - AOH3106 MOSFET datasheet
AOH3106 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BUK553-60B | BUK553-60A
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