AOI11S60 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI11S60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.1 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 37.3 pF
Maximum Drain-Source On-State Resistance (Rds): 0.399 Ohm
Package: TO-251A
AOI11S60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI11S60 Datasheet (PDF)
0.1. aoi11s60.pdf 
Size:394K _aosemi
AOD11S60/AOI11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399Ω robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg and
0.2. aoi11s60.pdf Size:272K _inchange_semiconductor
isc N-Channel MOSFET Transistor AOI11S60 FEATURES ·Drain Current –I = 11A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.399Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general pur
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