AOI11S60 MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

AOI11S60 Specs and Replacement

   Type Designator: AOI11S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 37.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
   Package: TO-251A

AOI11S60 substitution

- MOSFET ⓘ Cross-Reference Search

AOI11S60 datasheet

..1. Size:394K aosemi
aoi11s60.pdf pdf_icon

AOD11S60/AOI11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD11S60 & AOI11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg and... See More ⇒

..2. Size:272K inchange semiconductor
aoi11s60.pdf pdf_icon

isc N-Channel MOSFET Transistor AOI11S60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

Detailed specifications: AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , AOH3106 , AOH3110 , IRF1405 , AOI1N60 , AOI208 , AOI2210 , AOI2N60 , AOI2N60A , AOI403 , AOI409 , AOI4102 .