AOI403 MOSFET Datasheet: P-Ch, 30V, 70A. Full specification with pinout and replacement list

AOI403 Specs and Replacement

Type Designator: AOI403

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 585 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-251A

AOI403 substitution

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AOI403 datasheet

..1. Size:398K aosemi
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AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70A resistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V) ... See More ⇒

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..3. Size:241K inchange semiconductor
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isc P-Channel MOSFET Transistor AOI403 FEATURES Drain Current I =-70A@ T =25 D C Drain Source Voltage- V =-30V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

9.1. Size:237K aosemi
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AOD409/AOI409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD/I409 uses advanced trench technology to VDS (V) = -60V provide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V) gate resistance. With the excellent thermal resistance RDS(ON) ... See More ⇒