All MOSFET. AOI403 Datasheet

 

AOI403 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOI403
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 585 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-251A

 AOI403 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI403 Datasheet (PDF)

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 aoi403.pdf

AOI403 AOI403

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

 ..2. Size:398K  aosemi
 aod403 aoi403.pdf

AOI403 AOI403

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

 ..3. Size:241K  inchange semiconductor
 aoi403.pdf

AOI403 AOI403

isc P-Channel MOSFET Transistor AOI403FEATURESDrain Current I =-70A@ T =25D CDrain Source Voltage-: V =-30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:237K  aosemi
 aod409 aoi409.pdf

AOI403 AOI403

AOD409/AOI409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD/I409 uses advanced trench technology to VDS (V) = -60Vprovide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V)gate resistance. With the excellent thermal resistance RDS(ON)

 9.2. Size:383K  aosemi
 aoi409.pdf

AOI403 AOI403

AOD409/AOI40960V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.3. Size:206K  inchange semiconductor
 aoi409.pdf

AOI403 AOI403

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOI409FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ME4953 | IXFV12N90PS

 

 
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