AOI4N60 Datasheet and Replacement
Type Designator: AOI4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 53 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-251A
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AOI4N60 Datasheet (PDF)
aoi4n60.pdf
AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod4n60 aoi4n60 aou4n60.pdf
AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W
Keywords - AOI4N60 MOSFET datasheet
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History: CHM85A3PAGP | SQ9407EY-T1 | ALD1103DB | SML100L16 | SFFX054Z | TK7P65W
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