AOI4N60 Datasheet and Replacement
Type Designator: AOI4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 53 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-251A
AOI4N60 substitution
AOI4N60 Datasheet (PDF)
aoi4n60.pdf
AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod4n60 aoi4n60 aou4n60.pdf
AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
Datasheet: AOI4185 , AOI423 , AOI4286 , AOI442 , AOI444 , AOI468 , AOI478 , AOI482 , IRF840 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 , AOI514 , AOI516 , AOI530 .
History: IRFS654B | FQI9N50TU | SPB100N03S2 | NCE65N760 | DHESJ17N65 | PT530BA | NTMFS4H013NF
Keywords - AOI4N60 MOSFET datasheet
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History: IRFS654B | FQI9N50TU | SPB100N03S2 | NCE65N760 | DHESJ17N65 | PT530BA | NTMFS4H013NF
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