All MOSFET. AOI508 Datasheet

 

AOI508 Datasheet and Replacement


   Type Designator: AOI508
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-251A
 

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AOI508 Datasheet (PDF)

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AOI508

AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:302K  aosemi
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AOI508

AOD508/AOI50830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 ..3. Size:273K  inchange semiconductor
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AOI508

isc N-Channel MOSFET Transistor AOI508FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: AOI444 , AOI468 , AOI478 , AOI482 , AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , 50N06 , AOI510 , AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 .

History: APT10025JLC | AOWF9N70 | MSD2N70 | SVSP60R090FJDHD4 | SUP85N10-10P | TK10A60W | BUK138-50DL

Keywords - AOI508 MOSFET datasheet

 AOI508 cross reference
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