AOI8N25 Specs and Replacement
Type Designator: AOI8N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
Package: TO-251A
AOI8N25 substitution
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AOI8N25 datasheet
aod8n25 aoi8n25.pdf
AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 300V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 8A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒
aoi8n25.pdf
AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 300V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 8A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒
aoi8n25.pdf
isc N-Channel MOSFET Transistor AOI8N25 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R =0.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
Detailed specifications: AOI514, AOI516, AOI530, AOI538, AOI5N40, AOI7N60, AOI7N65, AOI7S65, IRFB4227, AOI9N50, AOK10N90, AOK18N65, AOK20N60, AOK20S60, AOK22N50, AOK27S60, AOK29S50
Keywords - AOI8N25 MOSFET specs
AOI8N25 cross reference
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