AOI8N25 Datasheet and Replacement
Type Designator: AOI8N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 51 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
Package: TO-251A
AOI8N25 substitution
AOI8N25 Datasheet (PDF)
aoi8n25.pdf

AOD8N25/AOI8N25250V,8A N-Channel MOSFETGeneral Description Product SummaryThe AOD8N25 & AOI8N25 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 300V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 8Apopular AC-DC applications. RDS(ON) (at VGS=10V)
aoi8n25.pdf

isc N-Channel MOSFET Transistor AOI8N25FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R =0.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: AOI514 , AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AON6414A , AOI9N50 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 .
History: SSF2160G4 | APTC60DAM18CTG | DMP6110SSD | KI2300 | EM6K7 | ELM56801EA | HUFA75829D3S
Keywords - AOI8N25 MOSFET datasheet
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History: SSF2160G4 | APTC60DAM18CTG | DMP6110SSD | KI2300 | EM6K7 | ELM56801EA | HUFA75829D3S



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