All MOSFET. AOK18N65 Datasheet

 

AOK18N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOK18N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 417 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 83 nS

Drain-Source Capacitance (Cd): 271 pF

Maximum Drain-Source On-State Resistance (Rds): 0.39 Ohm

Package: TO-247

AOK18N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOK18N65 Datasheet (PDF)

1.1. aok18n65l.pdf Size:443K _aosemi

AOK18N65
AOK18N65

AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.2. aok18n65.pdf Size:443K _aosemi

AOK18N65
AOK18N65

AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

Datasheet: AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , IRF520 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 .

 


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