All MOSFET. AOK18N65 Datasheet

 

AOK18N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOK18N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO-247

 AOK18N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOK18N65 Datasheet (PDF)

 ..1. Size:443K  aosemi
 aok18n65.pdf

AOK18N65 AOK18N65

AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:378K  inchange semiconductor
 aok18n65.pdf

AOK18N65 AOK18N65

isc N-Channel MOSFET Transistor AOK18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 0.1. Size:443K  aosemi
 aok18n65l.pdf

AOK18N65 AOK18N65

AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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