AOK18N65 Datasheet and Replacement
Type Designator: AOK18N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 271 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: TO-247
AOK18N65 substitution
AOK18N65 Datasheet (PDF)
aok18n65.pdf
AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aok18n65.pdf
isc N-Channel MOSFET Transistor AOK18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aok18n65l.pdf
AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
Datasheet: AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , IRFB4110 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 .
History: TPH3R506PL | IRL5Y7413CM | SM4901CSK | NTGS4141NT1G | SVS14N65FJD2 | AUIRF3710Z | AOK20S60
Keywords - AOK18N65 MOSFET datasheet
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History: TPH3R506PL | IRL5Y7413CM | SM4901CSK | NTGS4141NT1G | SVS14N65FJD2 | AUIRF3710Z | AOK20S60
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