All MOSFET. AOK53S60 Datasheet

 

AOK53S60 Datasheet and Replacement


   Type Designator: AOK53S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 59 nC
   tr ⓘ - Rise Time: 102 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-247
 

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AOK53S60 Datasheet (PDF)

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AOK53S60

AOK53S60TM600V 53A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK53S60 has been fabricated using the advanced IDM 215AMOSTM high voltage process that is designed to deliverhigh levels of performance and robustness in switching RDS(ON),max 0.07applications. Qg,typ 59nCBy providing low RDS(on), Qg and EOSS along with Eoss @ 400V

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AOK53S60

isc N-Channel MOSFET Transistor AOK53S60FEATURESDrain Current I = 53A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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