AOL1426 Datasheet and Replacement. Cross Reference Search

AOL1426 Datasheet (PDF)

..1. Size:231K aosemi
aol1426.pdf pdf_icon

AOL1426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1426 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.This deviceID = 46A (VGS = 10V)is suitable for use as a high side switch in SMPS andRDS(ON)

8.1. Size:235K aosemi
aol1420.pdf pdf_icon

AOL1420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

8.2. Size:230K aosemi
aol1428.pdf pdf_icon

AOL1428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V)general purpose applications.RDS(ON)

8.3. Size:240K aosemi
aol1428a.pdf pdf_icon

AOL1428A30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1428A combines advanced trench MOSFET 30V49Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is suitable for use as a

Datasheet: AOL1202 , AOL1208 , AOL1240 , AOL1242 , AOL1401 , AOL1404 , AOL1413 , AOL1414 , IRF9540N , AOL1428A , AOL1432 , AOL1432A , AOL1448 , AOL1454 , AOL1458 , AOL1482 , AOL1700 .