AOL1426 - параметры транзистора MOSFET, его аналоги, datasheet

AOL1426 Datasheet (PDF)

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AOL1426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1426 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.This deviceID = 46A (VGS = 10V)is suitable for use as a high side switch in SMPS andRDS(ON)

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AOL1420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

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AOL1428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V)general purpose applications.RDS(ON)

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AOL1428A30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1428A combines advanced trench MOSFET 30V49Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is suitable for use as a

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