AON2260
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON2260
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044
Ohm
Package: DFN2X2B
AON2260
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON2260
Datasheet (PDF)
..1. Size:231K aosemi
aon2260.pdf
AON226060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2260 combines advanced trench MOSFET 60Vtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS = 10V)
9.1. Size:254K aosemi
aon2290.pdf
AON2290100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2290 combines advanced trench MOSFET 100Vtechnology with a low resistance package to provide ID (at VGS=10V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
9.2. Size:283K aosemi
aon2240.pdf
AON224040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2240 combines advanced trench MOSFET 40Vtechnology with a low resistance package to provide ID (at VGS=10V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
9.3. Size:1472K kexin
aon2240.pdf
SMD Type MOSFETN-Channel MOSFETAON2240 (KON2240)DFN 2x2BTop View Features VDS (V) = 40V ID = 8 A (VGS = 10V) RDS(ON) 21m (VGS = 10V) RDS(ON) 29m (VGS = 4.5V)Bottom View DGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-Source Voltage VGS 20 TA=25 8 Continuous Drain
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.