AON2401
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON2401
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.65
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.5
nC
trⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 345
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package: DFN2X2B
AON2401
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON2401
Datasheet (PDF)
..1. Size:240K aosemi
aon2401.pdf 
AON24018V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2401 combines advanced trench MOSFET -8Vtechnology with a low resistance package to provide ID (at VGS=-2.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-2.5V)
8.1. Size:260K aosemi
aon2407.pdf
AON240730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2407 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -6.3Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)
8.2. Size:247K aosemi
aon2406.pdf
AON240620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2406 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
8.3. Size:234K aosemi
aon2400.pdf
AON24008V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2400 combines advanced trench MOSFET 8Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 2.5V)
8.4. Size:221K aosemi
aon2403.pdf
AON240312V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2403 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
8.5. Size:247K aosemi
aon2409.pdf
AON240930V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V)
8.6. Size:235K aosemi
aon2408.pdf
AON240820V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2408 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =4.5V)
8.7. Size:243K aosemi
aon2405.pdf
AON240520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2405 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
8.8. Size:1877K cn vbsemi
aon2409.pdf
AON2409www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2Package0.030 at VGS = - 4.5 V -10a- 20 18 nC- Small Footprint Area0.040 at VGS = - 2.5 V -9a- Low On-ResistanceAPPLICATIONS Load Switch, PA Switch, and Battery Switch for PortableDevice
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