All MOSFET. AON5810 Datasheet

 

AON5810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON5810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2X5

 AON5810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON5810 Datasheet (PDF)

 ..1. Size:399K  aosemi
 aon5810.pdf

AON5810 AON5810

AON5810Common-Drain Dual N-Channel Enhancement Mode Field EffectTransistorGeneral Description FeaturesThe AON5810 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 7.7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V whileretaining a 12V VGS(MAX) rating. It is ESD protected. ThisRDS(ON)

 8.1. Size:401K  aosemi
 aon5816.pdf

AON5810 AON5810

AON5816 20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20V Low RDS(ON) With ESD Protection to improve battery performance and safety ID (at VGS=4.5V) 12A Common drain configuration for design simplicity RDS(ON) (at VGS=4.5V)

 9.1. Size:117K  aosemi
 aon5802a.pdf

AON5810 AON5810

AON5802A, AON5802ALCommon-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AON5802A uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V)voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

 9.2. Size:269K  aosemi
 aon5802b.pdf

AON5810 AON5810

AON5802B30V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON5802B uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

 9.3. Size:414K  aosemi
 aon5802bg.pdf

AON5810 AON5810

AON5802BG30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)

 9.4. Size:127K  aosemi
 aon5800.pdf

AON5810 AON5810

AON5800Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON5800 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

 9.5. Size:272K  aosemi
 aon5820.pdf

AON5810 AON5810

AON582020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON5820 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

Datasheet: AON4420L , AON4421 , AON4605 , AON4703 , AON4803 , AON4805L , AON4807 , AON5802B , IRFB3306 , AON5820 , AON6202 , AON6204 , AON6210 , AON6230 , AON6232 , AON6234 , AON6236 .

History: EKG1020 | BUK436-200B | SSF13N50F | SI2323DS | PP4B10AK | MTA65N20H8 | STH8NA60FI

 

 
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