AON5810Common-Drain Dual N-Channel Enhancement Mode Field EffectTransistorGeneral Description FeaturesThe AON5810 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 7.7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V whileretaining a 12V VGS(MAX) rating. It is ESD protected. ThisRDS(ON)

AON5816 20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20V Low RDS(ON) With ESD Protection to improve battery performance and safety ID (at VGS=4.5V) 12A Common drain configuration for design simplicity RDS(ON) (at VGS=4.5V)

AON5802A, AON5802ALCommon-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AON5802A uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V)voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

AON5802B30V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON5802B uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

AON5802BG30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)

AON5800Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON5800 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

AON582020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON5820 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)