AON5810 - описание и поиск аналогов

 ..1. Size:399K  aosemi
 aon5810.pdf 

AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.7 A (VGS = 4.5V) operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This RDS(ON)

 8.1. Size:401K  aosemi
 aon5816.pdf 

AON5816 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V Low RDS(ON) With ESD Protection to improve battery performance and safety ID (at VGS=4.5V) 12A Common drain configuration for design simplicity RDS(ON) (at VGS=4.5V)

 9.1. Size:117K  aosemi
 aon5802a.pdf 

AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

 9.2. Size:120K  aosemi
 aon5802.pdf 

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is RDS(ON)

 9.3. Size:269K  aosemi
 aon5802b.pdf 

AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

 9.4. Size:414K  aosemi
 aon5802bg.pdf 

AON5802BG 30V Dual N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)

 9.5. Size:127K  aosemi
 aon5800.pdf 

AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

 9.6. Size:272K  aosemi
 aon5820.pdf 

AON5820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)