All MOSFET. AON5820 Datasheet

 

AON5820 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON5820
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 2600 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN2X5

 AON5820 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON5820 Datasheet (PDF)

 ..1. Size:272K  aosemi
 aon5820.pdf

AON5820 AON5820

AON582020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON5820 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

 9.1. Size:117K  aosemi
 aon5802a.pdf

AON5820 AON5820

AON5802A, AON5802ALCommon-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AON5802A uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V)voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

 9.2. Size:269K  aosemi
 aon5802b.pdf

AON5820 AON5820

AON5802B30V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON5802B uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

 9.3. Size:399K  aosemi
 aon5810.pdf

AON5820 AON5820

AON5810Common-Drain Dual N-Channel Enhancement Mode Field EffectTransistorGeneral Description FeaturesThe AON5810 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 7.7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V whileretaining a 12V VGS(MAX) rating. It is ESD protected. ThisRDS(ON)

 9.4. Size:414K  aosemi
 aon5802bg.pdf

AON5820 AON5820

AON5802BG30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)

 9.5. Size:401K  aosemi
 aon5816.pdf

AON5820 AON5820

AON5816 20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20V Low RDS(ON) With ESD Protection to improve battery performance and safety ID (at VGS=4.5V) 12A Common drain configuration for design simplicity RDS(ON) (at VGS=4.5V)

 9.6. Size:127K  aosemi
 aon5800.pdf

AON5820 AON5820

AON5800Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON5800 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top