AON5820 Specs and Replacement

Type Designator: AON5820

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2600 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: DFN2X5

AON5820 substitution

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AON5820 datasheet

 ..1. Size:272K  aosemi
aon5820.pdf pdf_icon

AON5820

AON5820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V) ... See More ⇒

 9.1. Size:117K  aosemi
aon5802a.pdf pdf_icon

AON5820

AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u... See More ⇒

 9.2. Size:120K  aosemi
aon5802.pdf pdf_icon

AON5820

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is RDS(ON) ... See More ⇒

 9.3. Size:269K  aosemi
aon5802b.pdf pdf_icon

AON5820

AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V) ... See More ⇒

Detailed specifications: AON4421, AON4605, AON4703, AON4803, AON4805L, AON4807, AON5802B, AON5810, AO4468, AON6202, AON6204, AON6210, AON6230, AON6232, AON6234, AON6236, AON6240

Keywords - AON5820 MOSFET specs

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