AON5820 - аналоги, параметры транзистора - Справочник транзисторов

AON5820. Аналоги и основные параметры

Наименование производителя: AON5820

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2600 ns

Cossⓘ - Выходная емкость: 220 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm

Тип корпуса: DFN2X5

Аналог (замена) для AON5820

- подборⓘ MOSFET транзистора по параметрам

AON5820 даташит

..1. Size:272K aosemi
aon5820.pdf pdf_icon

AON5820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

9.1. Size:117K aosemi
aon5802a.pdf pdf_icon

AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

9.2. Size:120K aosemi
aon5802.pdf pdf_icon

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is RDS(ON)

9.3. Size:269K aosemi
aon5802b.pdf pdf_icon

AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)